Integration of Cu/SiOC in Cu dual damascene interconnect for 0.1-μm technology

Microelectronic Engineering

Volumn 64, Issue 1-4, 2002, Pages 35-42

  Fayolle, M ^a   Torres, J ^b   Passemard, G ^b   Fusalba, F ^b   Fanget, G ^a   Louis, D ^a   Assous, M ^a   Louveau, O ^b   Rivoire, M ^b   Haxaire, K ^b   Mourier, M ^a   Maitrejean, S ^a   Besson, P ^b   Broussous, L ^b   Arnaud, L ^a   Feldis, H ^b  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Copper; Integration; Interconnection; Low k dielectric; Organo silicate glass; SiOC

Indexed keywords

CARBON; COPPER; DIELECTRIC MATERIALS; DOPING (ADDITIVES); GLASS; MICROPOROSITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

ORGANO-SILICATE GLASS (OSG);

MICROELECTRONICS;

EID: 0036776632     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00769-4     Document Type: Conference Paper

References (3)