A comparative study of low dielectric constant barrier layer, etch stop and hardmask films of hydrogenated amorphous Si-(C, O, N)

Thin Solid Films

Volumn 460, Issue 1-2, 2004, Pages 211-216

  Wang, Y H ^a   Moitreyee, M R ^a   Kumar, R ^a   Shen, L ^b   Zeng, K Y ^b   Chai, J W ^b   Pan, J S ^b  

^a INSTITUTE OF MICROELECTRONICS   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Leakage current; Low dielectric constant; Plasma enhanced chemical vapor deposition technique; X Ray photoelectron spectroscopy

Indexed keywords

AMORPHOUS SILICON; ETCHING; HARDNESS; LEAKAGE CURRENTS; MASKS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

BONDING STRUCTURE; DAMASCENE STRUCTURE; HARDMASK FILMS; LOW DIELECTRIC CONSTANT;

THIN FILMS;

EID: 2942622300     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.01.055     Document Type: Article

References (28)

1. S.P. Jeng, M. Chang, T. Kroger, P. McAnally, R.H. Havemann, VLSI Tech. Dig. 7-9 June 1994, p. 73.
2. International Technology Roadmap for Semiconductors-Interconnect, 2001 ed., Semiconductor Industry Association, International SEMATECH, Austin, TX, 2001.
3. P. Xu, K. Huang, A. Patel, S. Rathi, B. Tang, J. Ferguson, J. Huang, C. Ngai, M. Loboda, Proceedings of the IEEE 1999 International Interconnect Technology Conference (IEEE Electron Devices Society, San Francisco, CA), 24-26 May 1999, p. 109.
4. Tsui B.Y., Fang K.L., Lee S.D. IEEE Trans. Electron Devices. 48:2001;2375.
5. Loboda M.J. Microelectron. Eng. 50:2000;15.
6. T. Ishimaru, Y. Shioya, H. Ikakura, M. Nozawa, Y. Nishimoto, S. Ohgawara, K. Maeda, Proceedings of the IEEE 2001 International Interconnect Technology Conference (IEEE Electron Devices Society, San Francisco, CA), 4-6 June 2001, p. 36.
7. Ishimaru T., Shioya Y., Ikakura H., Nozawa M., Ohgawara S., Ohdaira T., Suzuki R., Maeda K. J. Electrochem. Soc. 150:2003;F83.
8. Yang C.S., Oh K.S., Ryu J.Y., Kim D.C., Shou-Yong J., Choi C.K., Lee H.J., Um S.H., Chang H.Y. Thin Solid Films. 390:2001;113.
9. Choi W.K., Ong T.Y., Tan L.S., Loh F.C., Tan K.L. J. Appl. Phys. 83:1998;4968.
10. Solomon I., Schmidt M.P., Senemaud C., Khodja M.D. Phys. Rev. B. 38:1988;13 263.
11. Donley M.S., Baer D.R., Stoebe T.G. Surf. Interface Anal. 11:1988;335.
12. Wang Y.H., Lin J., Chua C.H.A. Mater. Sci. Eng. B. 95:2002;43.
13. Horetz B., Michel H.J., Halbritter J. J. Mater. Res. 9:1994;3088.
14. Xiao X.C., Li Y.W., Song L.X., Peng X.F., Hu X.F. Appl. Surf. Sci. 156:2000;155.
15. Wagner C.D., Passoja D.E., Hillery H.F., Kiniski T.G., Six H.A., Jansen W.T., Taylor J.A. J. Vac. Sci. Technol. 21:1982;933.
16. Lutz H., Bruns M., Link F., Baumann H. Thin Solid Films. 332:1998;230.
17. Besling W.F.A., Goossens A., Meester B., Schoonman J. J. Appl. Phys. 83:1998;544.
18. Tabbal M., Merel P., Moisa S., Chaker M., Ricard A., Moisan M. Appl. Phys. Lett. 69:1996;1698.
19. Gheorghiu A., Senemaud C., Roulet H., Dufour G., Moreno T., Bodeur S., Reynaud C., Cauchetier M., Luce M. J. Appl. Phys. 71:1992;4118.
20. Sitbon S., Hugon M.C., Agius B., Abel F., Courant J.L., Puech M. J. Vac. Sci. Technol. 13:1995;2900.
21. Demichelis F., Pirri C.F., Tresso E., Stapinski T. J. Appl. Phys. 71:1992;5641.
22. Gat E., Elkhakani M.A., Chaker M., Jean A., Boily S., Pepin H., Kieffer J.C., Durand J., Cros B., Rousseaux F., Gujrathi S. J. Mater. Res. 7:1992;2478.
23. Nguyen V.S., Burton S., Pan P. J. Electrochem. Soc. 131:1984;2348.
24. Lucovsky G., Tsu D.V. J. Vac. Sci. Technol. A. 5:1987;2231.
25. Weldon M.K., Stefanov B.B., Raghavachari K., Chabal Y.J. Phys. Rev. Lett. 79:1997;2851.
26. Wieder H., Cardona M., Guarnieri C.R. Phys. Status Solidi B. 92:1979;99.
27. Mutsukura N., Akita K.I. Thin Solid Films. 349:1999;115.
28. Tawada Y., Kondo K., Okamoto H., Hamakawa Y. J. Appl. Phys. 53:1982;5273.