Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics

IEEE Transactions on Electron Devices

Volumn 47, Issue 3, 2000, Pages 601-608

  Vogel, Eric M ^a   Kirklen, Henson ^b   Richter, Curt A ^a   Suehle, John S ^a  

^a North Carolina State University   (United States)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC FILMS; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ENERGY GAP; GATES (TRANSISTOR); SENSITIVITY ANALYSIS;

INTERFACE STATE DENSITY; TUNNELING GATE DIELECTRICS;

MOS CAPACITORS;

EID: 0033870951     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.824736     Document Type: Article

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