Strong potential profile fluctuations and effective localization process in InGaN/GaN multiple quantum wells grown on {10-1m} faceted surface GaN template

Journal of Applied Physics

Volumn 100, Issue 1, 2006, Pages

  Haffouz, S ^a   Tang, H ^a   Bardwell, J A ^a   Lefebvre, P ^b   Bretagnon, T ^b   Riemann, T ^c   Christen, J ^c  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; GALLIUM NITRIDE; INDIUM; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SURFACES;

DECAY TIME; DIFFERANT LOCALIZATION; ENERGY LEVEL; POTENTIAL PROFILE FLUCTUATIONS (PPF);

SEMICONDUCTOR QUANTUM WELLS;

EID: 33746216131     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2214211     Document Type: Article

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