Room-temperature continuous-wave operation of InGaN multiple-quantum-well laser diodes with an asymmetric waveguide structure

Applied Physics Letters

Volumn 75, Issue 4, 1999, Pages 581-583

  Kneissl, Michael ^a   Bour, David P ^a   Van De Walle, Chris G ^a   Romano, Linda T ^a   Northrup, John E ^a   Wood, Rose M ^a   Teepe, Mark ^a   Johnson, Noble M ^a  

^a PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; ETCHING; ION BEAMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE;

CHEMICALLY ASSISTED ION BEAM ETCHING (CAIBE); INDIUM GALLIUM NITRIDE;

QUANTUM WELL LASERS;

EID: 0032607584     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124448     Document Type: Article

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