Reduction of grown-in defects by vacancy-assisted oxygen precipitation in high density dynamic random access memory

Applied Physics Letters

Volumn 83, Issue 23, 2003, Pages 4863-4865

  Kim, Il Gweon ^a   Kwon, Jae Sun ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; CRYSTAL DEFECTS; OPTICAL MICROSCOPY; OXIDATION; OXYGEN; PRECIPITATION (CHEMICAL); SILICON; SILICON WAFERS; SUPERSATURATION;

BULK MICRODEFECT (BMD); CRYSTAL ORIGINATED PARTICLES (COP);

DYNAMIC RANDOM ACCESS STORAGE;

EID: 0348197018     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1632536     Document Type: Article

References (8)

1. J. Damiano, C. K. Subramanian, M. Gibson, Y. S. Feng, L. Zeng, J. Sebek, E. Deeters, C. Feg, H. Tian, J. Scott, K. Cox and J. D. Hayden, IEEE VLSI Technical Digest, 9-11 June 1998, Honolulu, HI (IEEE, New York, 1998), p. 212.
2. S. Ueno, T. Yamashita, H. Oda, S. Komori, Y. Inoue, and T. Nishimura, Tech. Dig. - Int. Electron Devices Meet., 153 (1998).
3. H. Yamagish, I. Fusegawa, N. Fujimaki, and M. Katayama, Semicond. Sci. Technol. 7, A135 (1992).
4. J. Ryuta, E. Morita, T. Tanaka, and Y. Shimanuki, Jpn. J. Appl. Phys. 78, 5984 (1995).
5. N. Adachi, T. Hisatomi, M. Sano, and H. Tsuya, J. Electrochem. Soc. 147, 1910 (1976).
6. G. A. Rozgonyi, R. P. Doysher, and C. W. Pearce, J. Electrochem. 123, 350 (2000).
7. N. Adachi, H. Nishikawa, Y. Komatsu, M. Hourai, M. Sano, and T. Shigemasu, Mater. Res. Soc. Symp. Proc. 262, 815 (1992).
8. H. Abe, I. Suzuki, and H. Koyo, J. Electrochem. Soc. 144, 306 (1997).