Growth of semi-insulating GaN by using two-step AlN buffer layer

Chinese Physics Letters

Volumn 24, Issue 6, 2007, Pages 1641-1644

  Zhou, Zhong Tang ^a   Guo, Li Wei ^a   Xing, Zhi Gang ^a   Ding, Guo Jian ^a   Zhang, Jie ^a   Peng, Ming Zeng ^a   Jia, Hai Qiang ^a   Chen, Hong ^a   Zhou, Jun Ming ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; BUFFER LAYERS; GALLIUM NITRIDE; INSULATION; INTERFACES (MATERIALS); LASER BEAMS; SAPPHIRE; SHEET RESISTANCE; TEMPERATURE;

ALN BUFFER; ALN BUFFER LAYERS; AS-GROWN; GAN BUFFER; HIGH-SHEET-RESISTANCE; HIGHEST TEMPERATURE; LOWS-TEMPERATURES; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; SAPPHIRE SUBSTRATES; SEMI-INSULATING GAN;

III-V SEMICONDUCTORS;

EID: 34250024369     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/24/6/058     Document Type: Article

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