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Volumn 80, Issue 5, 2002, Pages 799-801

Direct measurement of electron transport in GaN/sapphire interface layer grown by metalorganic chemical vapor deposition

(5) Kim, K S a Cheong, M G a Cho, H K a Suh, E K a Lee, H J a

a Chonbuk National University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; CAPACITANCE VOLTAGE MEASUREMENTS; DIRECT MEASUREMENT; ELECTRON TRANSPORT; GAN/SAPPHIRE; HIGH ACCEPTOR DENSITY; INTERFACE LAYER; IONIZED IMPURITIES; LARGE SPACES; SCATTERING MECHANISMS; TEMPERATURE DEPENDENT; THIN LAYERS;

BOLTZMANN EQUATION; DEPOSITION; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION;

SCATTERING;

EID: 79956038771 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1446991 Document Type: Article

Times cited : (10)

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