Growth of crack-free and high-quality AlGaN with high Al content using epitaxial AlN (0001) films on sapphire

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 498-501

  Kida, Y ^a   Shibata, T ^a,b   Naoi, H ^a   Miyake, H ^a   Hiramatsu, K ^a   Tanaka, M ^b  

^a MIE UNIVERSITY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; COMPOSITION; COMPRESSIVE STRESS; CRACK PROPAGATION; CRYSTALLINE MATERIALS; DIFFRACTION; EPITAXIAL GROWTH; LATTICE CONSTANTS; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; THERMAL EFFECTS; X RAY ANALYSIS;

ALUMINUM GALLIUM NITRIDE; FULL WIDTH AT HALF MAXIMUM; TRIMETHYLALUMINUM; TRIMETHYLGALLIUM; X RAY ROCKING CURVE;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0036965069     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<498::AID-PSSA498>3.0.CO;2-K     Document Type: Article

References (14)

1. S. Yoshida, S. Misawa, and S. Gonda, J. Appl. Phys. 53, 6844 (1982).
2. Y. Koide, H. Itoh, M. R. H. Khan, K. Hiramatsu, N. Sawaki, and I. Akasaki, J. Appl. Phys. 61, 4540 (1987).
3. K. Ito, K. Hiramatsu, H. Amano, and I. Akasaki, J. Cryst. Growth 104, 533 (1990).
4. H. Amano, M. Iwaya, N. Hayashi, T. Kashima, S. Nitta, C. Wetzel, and I. Akasaki, phys. stat. sol. (b) 216, 683 (1999).
5. Y. Ohba, R. Sato, and K. Kaneko, Jpn. J. Appl. Phys. 40, L1293 (2001).
6. T. Shibata, K. Asai, T. Nagal, S. Sumiya, M. Tanaka, O. Oda, H. Miyake, and K. Hiramatsu, Proc. MRS 2001 Fall Meeting, Boston (USA), Nov. 26-30, 2001, I9.3, to be published.
7. T. Shibata, Y. Kida, H. Miyake, K. Hiramatsu, Y. Hori, K. Asai, T. Nagai, S. Sumiya, M. Tanaka, and O. Oda, Proc. 28th Internat. Symp. Compound Semicond. 2001, Tokyo (Japan), Oct. 1-4, 2001, TuP-30, to be published.
8. T. Detchprohm, K. Hiramatsu, K. Itoh, and I. Akasaki, Jpn. J. Appl. Phys. 31, L1454 (1992).
9. K. Hiramatsu, T. Detchprohm, and I. Akasaki, Jpn. J. Appl. Phys. 32, 1528 (1993).
10. W. Yim, E. Stofko, P. Zanzucchi, J. Pankove, M. Ettenberg, and S. Gilbert, J. Appl. Phys. 44, 292 (1973).
11. A. F. Wright, J. Appl. Phys. 82, 2833 (1997).
12. T. Takeuchi, Doctoral Thesis, Faculty of Science and Technology, Meijo University, Nagoya, 1998.
13. I. Akasaki, and H. Amano, Jpn. J. Appl. Phys. 36, 5393 (1997).
14. S. Pereira, M. R. Correia, E. Pereira, K. P. O'Donnell, E. Alves, A. D. Sequeira, N. Franco, I. M. Watson, and C. J. Deatcher, Appl. Phys. Lett. 80, 3913 (2002).