Electrical and optical properties of semi-insulating GaN

Materials Science and Engineering B

Volumn 44, Issue 1-3, 1997, Pages 423-426

  Look, D C ^a   Reynolds, D C ^a   Jones, R L ^b   Kim, W ^c   Aktas, O ^c   Botchkarev, A ^c   Salvador, A ^c   Morkoc H ^c  

^a WRIGHT STATE UNIVERSITY   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Light emitting diodes; Molecular beam epitaxy; Photoluminescence

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC PROPERTIES; HALL EFFECT; INSULATING MATERIALS; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR GROWTH; STOICHIOMETRY;

SEMI-INSULATING GALLIUM NITRIDES;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0041763235     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(96)01803-x     Document Type: Article

References (21)

1. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B, 10 (1992) 1237; S.N. Mohammad and H. Morkoç, Progress in Quantum Electronics (in press).
2. S. Strite and H. Morkoç, J. Vac. Sci. Technol. B, 10 (1992) 1237; S.N. Mohammad and H. Morkoç, Progress in Quantum Electronics (in press).
3. H. Amano, M. Kito, K. Hiamatsu and I. Akasaki, Jpn. J. Appl. Phys., 28 (1989) L2112.
4. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys., 35 (1996) L74.
5. D.K. Gaskill, A.E. Wickenden, K. Doverspike, B. Tadayon and L.B. Rowland, J. Electron. Mater., 24 (1995) 1525.
6. R.J. Molnar, T. Lei and T.D. Moustakas, Appl. Phys. Lett., 62 (1993) 72.
7. C. Wang and R.F. Davis, Appl. Phys. Lett., 63 (1993) 990.
8. D.C. Look, D.C. Reynolds, W. Kim, O. Aktas, A. Botchkarev, A. Salvador and H. Morkoç, J. Appl. Phys., 80 (1996) 2960.
9. N.F. Mott and W.D. Twose, Adv. Phys., 10 (1961) 107.
10. B.I. Shklovskii, Sov. Phys. Semicond., 6 (1973) 1053.
11. T. Matsubara and Y. Toyozawa, Progr. Theoret. Phys. (Kyoto), 26 (1961) 739.
12. D.L. Rode, Phys. Rev. B, 2 (1970) 1012.
13. B.R. Nag, Electron Transport in Compound Semiconductors, Springer, New York, 1980.
14. D.C. Look and P.C. Colter, Phys. Rev. B, 28 (1983) 1151.
15. R.J. Molnar, K.B. Nichols, P. Maki, E.R. Brown and I. MeIngailis, Mater. Res. Soc. Symp. Proc., 378 (1995) 479.
16. P. Perlin, T. Suski, H. Teisseyre, M. Leszczynski, I. Grzegory, J. Jun, S. Porowski, B. Boguslawski, J. Bernholc, J.C. Chervin, A. Polian and T.D. Moustakas, Phys. Rev. Lett., 75 (1995) 296.
17. D.W. Jenkins, J.D. Dow and M.-H, Tsai, J. Appl. Phys., 72 (1992) 4120.
18. P. Boguslawski, E.L. Briggs and J. Bernholo, Phys. Rev. B, 51 (1995) 17255.
19. I. Gorozyca, A. Svane and N.E. Christensen, Acta Phys. Polonica A, 88 (1995) 723.
20. S. Fischer, C. Wetzel, E.E. Haller and B.K. Meyer, Appl. Phys. Lett., 67 (1995) 1298.
21. D. Emin, in S.S. Mitra (ed.), Physics of Structurally Disordered Solids, Plenum, New York, 1976, p. 461.