Growth of high-quality GaN films on epitaxial AlN/sapphire templates by MOVPE

Journal of Crystal Growth

Volumn 244, Issue 1, 2002, Pages 6-11

  Sakai, Masahiro ^a   Ishikawa, Hiroyasu ^a   Egawa, Takashi ^a   Jimbo, Takashi ^a   Umeno, Masayoshi ^a   Shibata, Tomohiko ^b   Asai, Keiichiro ^b   Sumiya, Shigeaki ^b   Kuraoka, Yoshitaka ^b   Tanaka, Mitsuhiro ^b   Oda, Osamu ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b NGK INSULATORS LTD   (Japan)

Author keywords

A1. Characterization; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS;

HALL MOBILITY;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0036723333     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01573-7     Document Type: Article

References (12)