메뉴 건너뛰기




Volumn 38, Issue 4-5, 2007, Pages 463-473

Reliability computer-aided design tool for full-chip electromigration analysis and comparison with different interconnect metallizations

Author keywords

Aluminum (AL) interconnects; Computer aided design (CAD); Copper (Cu) interconnects; Electromigration; Reliability; Thermal analysis

Indexed keywords

COMPUTER AIDED DESIGN; ELECTRIC POWER SYSTEM INTERCONNECTION; INTEGRATED CIRCUIT LAYOUT; MATERIALS SCIENCE; METALLIZING; MICROPROCESSOR CHIPS; RELIABILITY THEORY;

EID: 34249315774     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.11.017     Document Type: Article
Times cited : (23)

References (36)
  • 1
    • 34249333934 scopus 로고    scopus 로고
    • International Technology Roadmap for Semiconductors 〈http://public.itrs.net〉.
  • 3
    • 34249341449 scopus 로고    scopus 로고
    • C.V. Thompson, et al., Modeling and experimental characterization of electromigration in interconnect trees, in: Proceedings of Workshop on Stress Induced Phenomena in Metallization, 1999, pp. 62-73.
  • 4
    • 8644263229 scopus 로고    scopus 로고
    • C.V. Thompson, et al., Experiments and models for circuit-level assessment of the reliability of Cu metallization, in: Proceedings of IITC, 2004, p. 69.
  • 5
    • 0033742028 scopus 로고    scopus 로고
    • M.J. Dion, Electromigration lifetime enhancement for lines with multiple branches, in: Proceedings of the International Reliability Physics Symposium, 2000, pp. 324-332.
  • 9
    • 0037084301 scopus 로고    scopus 로고
    • Probabilistic immortality of Cu damascene interconnects
    • Hau-Riege S.P. Probabilistic immortality of Cu damascene interconnects. J. Appl. Phys. 91 4 (2002) 2014
    • (2002) J. Appl. Phys. , vol.91 , Issue.4 , pp. 2014
    • Hau-Riege, S.P.1
  • 10
    • 0035981074 scopus 로고    scopus 로고
    • Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization
    • Gan C.L., Thompson C.V., Pey K.L., Choi W.K., Tay H.L., Yu B., and Radhakrishnan M.K. Effect of current direction on the lifetime of different levels of Cu dual-damascene metallization. Appl. Phys. Lett. 79 27 (2001) 4592
    • (2001) Appl. Phys. Lett. , vol.79 , Issue.27 , pp. 4592
    • Gan, C.L.1    Thompson, C.V.2    Pey, K.L.3    Choi, W.K.4    Tay, H.L.5    Yu, B.6    Radhakrishnan, M.K.7
  • 11
    • 0041766644 scopus 로고    scopus 로고
    • Experimental characterization and modeling of the reliability of three-terminal dualdamascene Cu interconnect trees
    • Gan C.L., Thompson C.V., Pey K.L., and Choi W.K. Experimental characterization and modeling of the reliability of three-terminal dualdamascene Cu interconnect trees. J. Appl. Phys. 94 2 (2003) 1222
    • (2003) J. Appl. Phys. , vol.94 , Issue.2 , pp. 1222
    • Gan, C.L.1    Thompson, C.V.2    Pey, K.L.3    Choi, W.K.4
  • 12
    • 34249304891 scopus 로고    scopus 로고
    • S.P. Hau-Riege, New methodologies for interconnect reliability assessments of integrated circuits, Ph.D. Dissertation, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, April 2000.
  • 13
    • 0035851540 scopus 로고    scopus 로고
    • Electromigration critical length effect in Cu/oxide dualdamascene interconnects
    • Lee K.D., Ogawa E.T., Matsuhashi H., Justison P.R., Ko K.S., and Ho P.S. Electromigration critical length effect in Cu/oxide dualdamascene interconnects. Appl. Phys. Lett. 79 20 (2001) 3236
    • (2001) Appl. Phys. Lett. , vol.79 , Issue.20 , pp. 3236
    • Lee, K.D.1    Ogawa, E.T.2    Matsuhashi, H.3    Justison, P.R.4    Ko, K.S.5    Ho, P.S.6
  • 15
    • 0001065090 scopus 로고
    • The electromigration short-length effect in Ti-AlCu-Ti metallization with tungsten studs
    • Filippi R.G., Biery G.A., and Wachnik R.A. The electromigration short-length effect in Ti-AlCu-Ti metallization with tungsten studs. J. Appl. Phys. 78 6 (1995) 3756
    • (1995) J. Appl. Phys. , vol.78 , Issue.6 , pp. 3756
    • Filippi, R.G.1    Biery, G.A.2    Wachnik, R.A.3
  • 16
    • 0000034975 scopus 로고    scopus 로고
    • Electromigration path in Cu thin-film lines
    • Hu C.K., Rosenberg R., and Lee K.Y. Electromigration path in Cu thin-film lines. Appl. Phys. Lett. 74 20 (1999) 2945
    • (1999) Appl. Phys. Lett. , vol.74 , Issue.20 , pp. 2945
    • Hu, C.K.1    Rosenberg, R.2    Lee, K.Y.3
  • 17
    • 0000160317 scopus 로고    scopus 로고
    • Simulations of stress evolution and the current density scaling of electromigration-induced failure times in pure and alloyed interconnects
    • Park Y.J., Andleigh V.K., and Thompson C.V. Simulations of stress evolution and the current density scaling of electromigration-induced failure times in pure and alloyed interconnects. J. Appl. Phys. 85 7 (1999) 3546
    • (1999) J. Appl. Phys. , vol.85 , Issue.7 , pp. 3546
    • Park, Y.J.1    Andleigh, V.K.2    Thompson, C.V.3
  • 18
    • 0002090122 scopus 로고    scopus 로고
    • 2-passivated single-crystal aluminum interconnects
    • 2-passivated single-crystal aluminum interconnects. Appl. Phys. Lett. 74 1 (1999) 37
    • (1999) Appl. Phys. Lett. , vol.74 , Issue.1 , pp. 37
    • Srikar, V.T.1    Thompson, C.V.2
  • 19
    • 34249320950 scopus 로고    scopus 로고
    • F. Wei, The electromigration drift velocity and the reliability of dual-damascene copper of interconnect trees, M.S. Thesis, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 2003.
  • 20
    • 34249302126 scopus 로고    scopus 로고
    • C.L. Gan, Reliability assessment methodologies for copper-based interconnects in integrated circuits, Ph.D. Dissertation, Department of Advanced Materials for Micro- and Nano-System (AMM&NS) at the Singapore-MIT Alliance, National University of Singapore, Singapore, 2003.
  • 21
    • 0037323106 scopus 로고    scopus 로고
    • Relationship between interfacial adhesion and electromigration in Cu metallization
    • Lane M.W., Liniger E.G., and Lloyd J.R. Relationship between interfacial adhesion and electromigration in Cu metallization. J. Appl. Phys. 93 3 (2003) 1417
    • (2003) J. Appl. Phys. , vol.93 , Issue.3 , pp. 1417
    • Lane, M.W.1    Liniger, E.G.2    Lloyd, J.R.3
  • 22
    • 34249312039 scopus 로고    scopus 로고
    • SysRel: System-Level IC Reliability, MIT, Cambridge, MA, September 2004 〈http://www-mtl.mit.edu/researchgroups/reliability/SysRel.html〉.
  • 23
    • 34249302860 scopus 로고    scopus 로고
    • C.S. Hau-Riege, A.P. Marathe, V. Pham, The effect of line length on the electromigration reliability of Cu interconnects, in: Proceedings of Advanced Metallization Conference, San Diego, CA, 2002, p. 169.
  • 24
    • 0024865572 scopus 로고    scopus 로고
    • J.A. Maiz, Characterization of electromigration under bidirectional (BC) and pulsed unidirectional (PDC) currents, in: Proceedings of the 27th International Reliability Physics Symposium, Phoenix, AZ, 1989, p. 220.
  • 25
    • 0001598176 scopus 로고    scopus 로고
    • Reliability analysis for encapsulated interconnect lines under DC and pulsed DC current using a continuum electromigration transport model
    • Clement J.J. Reliability analysis for encapsulated interconnect lines under DC and pulsed DC current using a continuum electromigration transport model. J. Appl. Phys. 82 12 (1997) 5991-6000
    • (1997) J. Appl. Phys. , vol.82 , Issue.12 , pp. 5991-6000
    • Clement, J.J.1
  • 26
    • 0001110437 scopus 로고    scopus 로고
    • The effects of microstructural transitions at width transitions on interconnect reliability
    • Hau-Riege C.S., and Thompson C.V. The effects of microstructural transitions at width transitions on interconnect reliability. J. Appl. Phys. 87 12 (2000) 8467
    • (2000) J. Appl. Phys. , vol.87 , Issue.12 , pp. 8467
    • Hau-Riege, C.S.1    Thompson, C.V.2
  • 27
    • 0034256167 scopus 로고    scopus 로고
    • The effects of the mechanical properties of the confinement material on electromigration in metallic interconnects
    • Hau-Riege S.P., and Thompson C.V. The effects of the mechanical properties of the confinement material on electromigration in metallic interconnects. J. Mater. Res. 15 8 (2000) 1797
    • (2000) J. Mater. Res. , vol.15 , Issue.8 , pp. 1797
    • Hau-Riege, S.P.1    Thompson, C.V.2
  • 28
    • 0037323106 scopus 로고    scopus 로고
    • Relationship between interfacial adhesion and electromigration in Cu metallization
    • Lane M.W., Liniger E.G., and Lloyd J.R. Relationship between interfacial adhesion and electromigration in Cu metallization. J. Appl. Phys. 93 3 (2003) 1417
    • (2003) J. Appl. Phys. , vol.93 , Issue.3 , pp. 1417
    • Lane, M.W.1    Liniger, E.G.2    Lloyd, J.R.3
  • 29
    • 3042518088 scopus 로고    scopus 로고
    • M. Hatano, T. Usui, Y. Shimooka, H. Kaneko, EM lifetime improvement of Cu damascene interconnects by p-SiC cap layer, in: Proceedings of IITC, 2002, pp. 212-214.
  • 31
    • 0029491614 scopus 로고    scopus 로고
    • M.B. Kleiner, et al., Thermal analysis of vertically integrated circuits, in: Proceedings of IEDM, 1995, p. 487.
  • 32
    • 0142217023 scopus 로고    scopus 로고
    • K. Jenkins, R.L. Franch, Impact of self-heating on digital SOI and strained-silicon CMOS circuits, in: Proceedings of SOI Conference, 2003, p. 161.
  • 33
    • 29244484305 scopus 로고    scopus 로고
    • S.M. Alam, D.E. Troxel, C.V. Thompson, Thermal aware cell-based methodology for full-chip electromigration reliability analysis, in: Proceedings of Great Lakes Symposium on VLSI (GLS-VLSI), April 2005, pp. 26-31.
  • 34
    • 34249324573 scopus 로고    scopus 로고
    • J. Behm, J. Huttunen, Heat spreading and conduction in compressed heatsink, in: Proceedings of the International Flotherm Users Conference, 2001.
  • 35
    • 0035208728 scopus 로고    scopus 로고
    • T. Chiang, K. Banerjee, K.C. Saraswat, Compact modeling and SPICE-based simulation for electrothermal analysis of multilevel ULSI interconnects, in: Proceedings of ICCAD, 2001, pp. 165-172.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.