Experiments and models for circuit-level assessment of the reliability of Cu metallization

Proceedings of the IEEE 2004 International Interconnect Technology Conference

Volumn , Issue , 2004, Pages 69-71

  Thompson, C V ^a   Gan, C L ^c   Alam, S M ^b   Troxel, D E ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b Department of Electrical Engineering and Computer Science   (United States)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ELECTROMIGRATION; GRAIN BOUNDARIES; INTEGRATED CIRCUITS; METALLIZING; SILICON NITRIDE; TENSILE STRESS;

ATOM FLUX; DIELECTRIC CRACKING; RESISTANCE FAILURES; SHUNT CURRENT;

COPPER;

EID: 8644263229     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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