EM lifetime improvement of Cu damascene interconnects by p-SiC cap layer

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 212-214

  Hatano, M ^a   Usui, T ^a   Shimooka, Y ^a   Kaneko, H ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON CARBIDE; SILICON NITRIDE;

CAP LAYERS; CU DAMASCENE INTERCONNECTS; CU-INTERCONNECTS; DIFFUSION PATHS; LIFETIME IMPROVEMENT; MEAN TIME TO FAILURE;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 3042518088     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2002.1014937     Document Type: Conference Paper

References (3)

1. C. -K. Hu., Proc. IEEE IITC, p.267 (1999)
2. E. O. Shaffer, Ph.D. Thesis, Massachusetts Institute of Technology, (1995)
3. M. A. Korhonen et al., J. Appl. Phys., P.3790 (1993)