First nucleation steps during deposition of SiO2 thin films by plasma enhanced chemical vapour deposition

Surface Science

Volumn 601, Issue 10, 2007, Pages 2223-2231

  Dudeck, D ^a,c   Yanguas Gil, A ^a   Yubero, F ^a   Cotrino, J ^a,b   Espinos J P ^a   de la Cruz, W ^a   Gonzalez Elipe A R ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE SEVILLA   (Spain)

^b UNIVERSITY OF SEVILLE   (Spain)

^c UNIVERSITY OF WUPPERTAL   (Germany)

Author keywords

Background analysis; Monte Carlo simulation; Nucleation; Plasma deposition; SiO2; TEM; Thin film growth; XPS

Indexed keywords

NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGULAR DISTRIBUTION FUNCTION; INELASTIC PEAK SHAPE ANALYSIS; SILICON SUBSTRATES;

THIN FILMS;

EID: 34247860581     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2007.03.027     Document Type: Article

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