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Volumn 118, Issue 14, 2003, Pages 6503-6511

Silicon epitaxial growth on the Si(001)2×1 surface from silane using dynamic Monte Carlo simulations

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ADSORPTION; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; MONTE CARLO METHODS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILANES; SURFACE STRUCTURE; TEMPERATURE;

EID: 0038298768     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1559151     Document Type: Article
Times cited : (11)

References (44)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.