|
Volumn 118, Issue 14, 2003, Pages 6503-6511
|
Silicon epitaxial growth on the Si(001)2×1 surface from silane using dynamic Monte Carlo simulations
|
Author keywords
[No Author keywords available]
|
Indexed keywords
ACTIVATION ENERGY;
ADSORPTION;
CHEMICAL VAPOR DEPOSITION;
COMPUTER SIMULATION;
EPITAXIAL GROWTH;
MOLECULAR BEAM EPITAXY;
MOLECULAR DYNAMICS;
MONTE CARLO METHODS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SILANES;
SURFACE STRUCTURE;
TEMPERATURE;
ARRHENIUS ACTIVATION ENERGY OF GROWTH;
DANGLING BOND;
DEFECT INDUCED ISOMERIZATION;
DYNAMIC MONTE CARLO SIMULATION;
SEMICONDUCTING SILICON;
|
EID: 0038298768
PISSN: 00219606
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1559151 Document Type: Article |
Times cited : (11)
|
References (44)
|