Nucleation and growth of diamond on titanium silicon carbide by microwave plasma-enhanced chemical vapor deposition

Journal of Crystal Growth

Volumn 294, Issue 2, 2006, Pages 452-458

  Yang, Songlan ^a   Yang, Qiaoqin ^a   Sun, Zhengming ^b  

^a UNIVERSITY OF SASKATCHEWAN   (Canada)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

A1. Nucleation; A2. Crystal morphology; A3. Chemical vapor deposition process; B1. Diamond; B1. Titanium silicon carbide

Indexed keywords

FILM GROWTH; HYDROGEN; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON WAFERS; TITANIUM COMPOUNDS; TRIBOLOGY;

INTERLAYERS; SLICES; TITANIUM SILICON CARBIDES;

DIAMOND FILMS;

EID: 33947099927     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.06.040     Document Type: Article

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