Physical and electrical properties of low temperature (< 100°C) SiO2 films deposited by electron cyclotron resonance plasmas

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 3, 2003, Pages 728-739

  Rashid, R ^a   Flewitt, A J ^a   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; DEHYDROGENATION; ELECTRIC CONDUCTIVITY; ELECTRON CYCLOTRON RESONANCE; ELECTRONIC DENSITY OF STATES; HELIUM; MAGNETIC FIELDS; MICROWAVES; PHYSICAL PROPERTIES; PLASMA DENSITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICA;

ELECTRON CYCLOTRON RESONANCE PLASMA REACTOR; GAS PHASE COMBINATION; HELIUM GAS FLOW RATE; MICROWAVE POWER; PHYSIOCHEMICAL PROPERTY; SILICON DIOXIDE FILM;

THIN FILMS;

EID: 0038274485     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1562179     Document Type: Article

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