Growth front roughening in silicon nitride films by plasma-enhanced chemical vapor deposition

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 7, 2002, Pages 753291-7532910

  Karabacak, T ^a   Zhao, Y P ^a   Wang, G C ^a   Lu, T M ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON NITRIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; DESORPTION; DIFFUSION; FILM; GROWTH RATE; MEASUREMENT; MODEL; SURFACE PROPERTY; TEMPERATURE DEPENDENCE; VAPORIZATION;

EID: 0037104349     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.075329     Document Type: Article

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