Dependence of photoluminescence and electrical properties with rapid thermal annealing in nitrogen-implanted ZnO films

Thin Solid Films

Volumn 515, Issue 17, 2007, Pages 6927-6930

  Vaithianathan, Veeramuthu ^a   Hishita, Shunichi ^b   Moon, Jong Ha ^a   Kim, Sang Sub ^c  

^a Chonnam National University   (South Korea)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c Inha University   (South Korea)

Author keywords

Ion implantation; Photoluminescence; Rapid thermal annealing; Zinc oxide

Indexed keywords

ALUMINA; ELECTRIC PROPERTIES; EXCITONS; HALL EFFECT; ION IMPLANTATION; NITROGEN; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; RAPID THERMAL ANNEALING;

ELECTRON CONCENTRATIONS; EXCITONIC RECOMBINATION EMISSION; POST-IMPLANTATION ANNEALING;

ZINC OXIDE;

EID: 34247642696     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.01.048     Document Type: Article

References (28)

1. Look D.C. Mater. Sci. Eng. B 80 (2001) 383
2. Makino T., Segawa Y., Kawasaki M., Ohtomo A., Shiroki R., Tamura K., Yasuda T., and Koinuma H. Appl. Phys. Lett. 78 (2001) 1237
3. Minegishi K., Koiwai Y., and Kikuchi K. Jpn. J. Appl. Phys. Part 2 36 (1997) L1453
4. Aoki T., Hatanaka Y., and Look D.C. Appl. Phys. Lett. 76 (2000) 3257
5. Joseph M., Tabata H., Saeki H., Ueda K., and Kawai T. Physica B 302303 (2001) 140
6. Ashrafi A.B.M.A., Suemune I., Kumano H., and Tanaka S. Jpn. J. Appl. Phys. Part 2 41 (2002) L1281
7. Guo X.L., Tabata H., and Kawai T. Opt. Mater. 19 (2002) 229
8. Look D.C., Reynolds D.C., Litton C.W., Jones R.L., Eason D.B., and Cantwell G. Appl. Phys. Lett. 81 (2002) 1830
9. Li X., Yan Y., Gessert T.A., Perkins C.L., Young D., DeHart C., Young M., and Coutts T.J. J. Vac. Sci. Technol. A 21 (2003) 1342
10. Li B.S., Liu Y.C., Zhi Z.Z., Shen D.Z., Lu Y.M., Zhang J.Y., Fan X.W., Mu R.X., and Henderson D.O. J. Mater. Res. 18 (2003) 8
11. Ryu Y.R., Lee T.S., and White H.W. Appl. Phys. Lett. 83 (2003) 87
12. Kim K.-K., Kim H.-S., Hwang D.-K., Lim J.-H., and Park S.-J. Appl. Phys. Lett. 83 (2003) 63
13. Rommeluère J.F., Svob L., Jomard F., Arroyo J.M., Lusson A., Sallet V., and Marfaing Y. Appl. Phys. Lett. 83 (2003) 287
14. Zeuner A., Alves H., Sann J., Kriegseis W., Neumann C., Hofmann D.M., Meyer B.K., Hoffmann A., Haboeck U., Straβburg M., and Kaschner A. Phys. Status Solidi C 1 (2004) 731
15. Bian J.M., Li X.M., Zhang C.Y., Yu W.D., and Gao X.D. Appl. Phys. Lett. 85 (2004) 4070
16. Ip K., Heo Y.W., Norton D.P., Pearton S.J., LaRoche J.R., and Ren F. Appl. Phys. Lett. 85 (2004) 1169
17. Look D.C., Renlund G.M., Burgener II R.H., and Sizelove J.R. Appl. Phys. Lett. 85 (2004) 5269
18. Vaithianathan V., Lee B.-T., and Kim S.S. Appl. Phys. Lett. 86 (2005) 062101
19. Zhang S.B., Wei S.H., and Zunger A. Phys. Rev. B 63 (2001) 75205
20. Van de Walle C.G. Phys. Rev. Lett. 85 (2000) 1012
21. Tsukazaki A., Ohtomo A., Onuma T., Ohtani M., Makino T., Sumiya M., Ohtani K., Chichibu S.F., Fuke S., Segawa Y., Ohno H., Koinuma H., and Kawasaki M. Nat. Maters 4 (2005) 42
22. Jeong T.S., Han M.S., Youn C.J., and Park Y.S. J. Appl. Phys. 96 (2004) 175
23. Chen Z.Q., Sekiguchi T., Yuan X.L., Maekawa M., and Kawasuso A. J. Phys.:Condens. Matter 16 (2004) S293
24. Georgobiani A.N., Gruzintsev A.N., Volkov V.T., Vorobiev M.O., Demin V.I., and Dravin V.A. Nucl. Instrum. Methods A 514 (2003) 117
25. Lin C.C., Chen S.Y., Cheng S.Y., and Lee H.Y. Appl. Phys. Lett. 84 (2004) 5040
26. Reuss F., Kirchner C., Gruber Th., Kling R., Maschek S., Limmer W., Waag A., and Ziemann P. J. Appl. Phys. 95 (2004) 3385
27. Xiong G., Ucer K.B., Williams T.R., Lee J., Bhattacharya D., Metson J., and Evans P. J. Appl. Phys. 97 (2005) 043528
28. Vaithianathan V., Lee B.-T., and Kim S.S. J. Appl. Phys. 98 (2005) 043519