N+ ion-implantation-induced defects in ZnO studied with a slow positron beam

Journal of Physics Condensed Matter

Volumn 16, Issue 2, 2004, Pages

  Chen, Z Q ^a   Sekiguchi, T ^b   Yuan, X L ^b   Maekawa, M ^a   Kawasuso, A ^a  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CATHODOLUMINESCENCE; COMPLEXATION; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; ION IMPLANTATION; POSITIVE IONS; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS; SEMICONDUCTOR DOPING; ULTRAVIOLET RADIATION; ZINC OXIDE;

HALL MEASUREMENTS; POSITRON BEAMS;

SINGLE CRYSTALS;

EID: 0442311016     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/2/035     Document Type: Conference Paper

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