Zn 0.9Mg 0.1O/ZnO p-n junctions grown by pulsed-laser deposition

Applied Physics Letters

Volumn 85, Issue 7, 2004, Pages 1169-1171

  Ip, K ^a   Heo, Y W ^a   Norton, D P ^a   Pearton, S J ^a   LaRoche, J R ^a   Ren, F ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DEVICES; ELECTRON CONCENTRATION; SPINTRONICS;

ACTIVATION ENERGY; ELECTRIC POTENTIAL; ELECTROLUMINESCENCE; EXCIMER LASERS; INTERFACES (MATERIALS); LASER ABLATION; LASER PULSES; MAGNESIA; METALLIZING; PULSED LASER DEPOSITION; SINGLE CRYSTALS; SUBSTRATES; THIN FILMS; VARISTORS; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 4444369325     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1783015     Document Type: Article

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