The memory characteristics of submicron feature-size PZT capacitors with PtOx top electrode by using dry-etching

Journal of Physics D: Applied Physics

Volumn 40, Issue 6, 2007, Pages 1635-1641

  Huang, Chun Kai ^a   Wang, Chen Chan ^a   Wu, Tai Bor ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTROCHEMICAL ELECTRODES; PASSIVATION; PHOTORESISTS; PLASMA WAVES;

ETCHING GAS MIXTURES; ETCHING SELECTIVITY; HIGH ETCHING RATE; SIDEWALL ANGLES;

CAPACITORS;

EID: 33947696183     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/6/008     Document Type: Article

References (31)

1. Scott J F, Paz C A de Araujo, McMillan L D, Yoshimori H, Watanabe H, Mihara T, Azuma M, Ueda T, Tetsuk Ueda and Kano G 1992 Ferroelectrics 133 47
2. Takemura K, Sakuma T and Miyasaka Y 1994 Appl. Phys. Lett. 64 2967
3. Joshi P C and Krupanidhi S B 1992 Appl. Phys. Lett. 61 1525
4. Chen M S, Wu T B and Wu J M 1996 Appl. Phys. Lett. 68 1430
5. Chang L-H, Apen E, Kottke M and Tracy C 1998 J. Vac. Sci. Technol. A 16 1489
6. Chiang M C, Pan F M, Cheng H C, Liu J S, Chan S H and Wei T C 2000 J. Vac. Sci. Technol. A 18 181
7. Yunogami T and Kumihashi T 1998 Japan. J. Appl. Phys. 37 6934
8. Milkove K R and Wang C X 1997 J. Vac. Sci. Technol. A 15 596
9. Kwon K-H, Kim C-I, Yun S J and Yeom G-Y 1998 J. Vac. Sci. Technol. A 16 2772
10. Kim H-w, Ju B-S, Nam B-Y, Yoo W-J, Kang C-J, Ahn T-H, Moon J-T and Lee M-Y 1999 J. Vac. Sci. Technol. A 17 2151
11. Gutsche M U, Satish D, Athavale W K and Hines D 2000 J. Vac. Sci. Technol. B 18 765
12. Chung C W and Ilsub C 2000 J. Vac. Sci. Technol. A 18 835
13. Kim J H, Kim K W and Woo S I 2004 J. Vac. Sci. Technol. B 22 1662
14. Shoji K et al 1996 VLSI Tech. Dig. p 28
15. Lee S-W et al 2002 Japan J. Appl. Phys. 41 6749
16. Liu T-P, Huang W-P and Wu T-B 2003 IEEE Trans. Electron Device 50 1425
17. Liu T-P, Huang W-P and Wu T-B 2003 J. Vac. Sci. Technol. A 21 502
18. Huang C-K and Wu T-B 2003 Appl. Phys. Lett. 83 3147
19. Abe Y, Yanagisawa H and Sasaki K 1998 Japan J. Appl. Phys. 37 4482
20. Kwon K-H, Kang S-Y, Yeom G-Y, Hong N-K and Lee J H 2000 J. Electrochem. Soc. 147 1807
21. Yoo W J, Hahm J H, Kim H W, Jung C O, Koh Y B and Lee M Y 1996 Japan J. Appl. Phys. 35 2501
22. Kim J-W, Kim Y-C and Lee W-J 1995 J. Appl. Phys. 78 2045
23. Grill A 1994 Cold plasma in materials fabrication (New York: IEEE Press) 1994
24. Jung J-K and Lee W-J 2001 Japan J. Appl. Phys. 40 1408
25. Chung C W and Kim C J 1997 Japan. J. Appl. Phys. 36 2747
26. Lee E G, Wouters D J, Willems G and Maes H E 1996 Appl. Phys. Lett. 69 1223
27. Soyer C, Cattan E, Rèmiens D and Guilloux-Viry M 2002 J. Appl. Phys. 92 1048
28. Lee J K, Kim T-Y, Chung I and Desu S B 1999 Appl. Phys. Lett. 75 334
29. Lin Y-y, Liu Q, Tang T-a and Yao X 2000 Appl. Surf. Sci. 165 34
30. Kang M-G, Kim K-T and Kim C-I 2001 Thin Solid Films 398-399 448
31. Jang H K, Lee S K, Cheol Eui Lee, Noh S J and Lee W I 2000 Appl. Phys. Lett. 76 882