Sub-quarter-micron Pt etching technology using electron beam resist with round-head

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12 B, 1998, Pages 6934-6938

  Yunogami, Takashi ^a   Kumihashi, Takao ^a  

^a HITACHI LTD   (Japan)

Author keywords

Anisotropy; CD gain; DRAM; FeRAM; Pt etching; Resist selectivity; Round head resist; Sidewall fence; Sub quarter micron

Indexed keywords

EID: 0004985024     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6934     Document Type: Article

References (3)

1. W. J. Yoo, J. H. Hahm, C. S. Hwang, S. O. Park, Y. B. Koh and M. Y. Lee: Proc. Dry Process Symp. (1995) p. 191.
2. H. Aoki: Ext. Abstr. (36th Spring Meet. 1993); Japan Society of Applied Physics and Related Societies, 9p-ZF-17.
3. T. Yunogami, K. Hisayuki and S. Sasabe: Proc. Dry Process Symp. (1997) p. 211.