Plasma-assisted dry etching of ferroelectric capacitor modules and application to a 32M ferroelectric random access memory devices with submicron feature sizes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 11 B, 2002, Pages 6749-6753

  Lee, Sang Woo ^a   Joo, Suk Ho ^a   Cho, Sung Lae ^a   Son, Yoon Ho ^a   Lee, Kyu Mann ^a   Nam, Sang Don ^a   Park, Kun Sang ^a   Lee, Yong Tak ^a   Seo, Jung Suk ^a   Kim, Young Dae ^a   Hyeong Geun, A N ^a   Kim, Hyoung Joon ^a   Jung, Yong Ju ^a   Heo, Jang Eun ^a   Lee, Moon Sook ^a   Park, Soon Oh ^a   Chung, U In ^a   Moon, Joo Tae ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Etching; Ferroelectric; FRAM; RTP; Switching polarization; XPS

Indexed keywords

ANNEALING; FERROELECTRIC DEVICES; PLASMAS; SOL-GELS; X RAY PHOTOELECTRON SPECTROSCOPY;

FERROELECTRIC; FRAM; RTP; SWITCHING POLARIZATION;

CAPACITORS;

EID: 0842328245     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.6749     Document Type: Article

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