High temperature platinum etching using Ti mask layer

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 2151-2155

  Kim, Hyoun Woo ^a   Ju, Byong Sun ^a   Nam, Byeong Yun ^a   Yoo, Won Jong ^a   Kang, Chang Jin ^a   Ahn, Tae Hyuk ^a   Moon, Joo Tae ^a   Lee, Moon Yong ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC CAPACITORS; DYNAMIC RANDOM ACCESS MEMORY; ELECTRODE MATERIAL; ELECTRODE TEMPERATURE; ETCHING PROCESS; ETCHING PROFILE; FINE PATTERN; HIGH TEMPERATURE; HIGHLY INTEGRATED; MASK LAYER; OXYGEN PLASMAS; PHYSICAL SPUTTERING; PLASMA IRRADIATIONS; TIO; TRANSMISSION ELECTRON; WAFER SUBSTRATES; WAFER TEMPERATURE;

ELECTROCHEMICAL ELECTRODES; ELECTROLYTIC CAPACITORS; ETCHING; OXYGEN; RANDOM ACCESS STORAGE; TRANSMISSION ELECTRON MICROSCOPY;

PLATINUM;

EID: 0000043267     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581741     Document Type: Conference Paper

References (3)

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2. S. Saito and K. Kuramasu, Jpn. J. Appl. Phys., Part 1 31, 135 (1992).
3. Won-Jong Yoo, Jin-Hwan Hahm, Hyoun-Woo Kim, Chan Ouk Jung, Young-Bum Koh, and Moon-Young Lee, Jpn. J. Appl. Phys., Part 1 35, 2501 (1996).