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Volumn 35, Issue 4 SUPPL. B, 1996, Pages 2501-2504

Control of etch slope during etching of Pt in Ar/Cl2/O2 plasmas

Author keywords

Chlorine; Etching; Model; Oxygen; Pt; Redeposition; Semiconductor; Sidewall; Slope; Sputtering

Indexed keywords

ARGON; CAPACITORS; CHLORINE; MASKS; OXYGEN; PHOTORESISTS; PLASMAS; PLATINUM; SEMICONDUCTOR MATERIALS; SPUTTERING;

ETCH SLOPE; MAGNETICALLY ENHANCED REACTIVE ION ETCHER; OXIDE MASK; PATTERN SIDEWALL; PHOTORESIST MASK; REDEPOSITION;

REACTIVE ION ETCHING;

EID: 0030122529 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.35.2501 Document Type: Article

Times cited : (68)

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