Etching characteristics of platinum in inductively coupled plasma using Cl2/CO

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 4, 2004, Pages 1662-1668

  Kim, Jin Hong ^a,b   Kim, Ki Woong ^a   Woo, Seong Ihl ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON MONOXIDE; CHLORINE COMPOUNDS; DRY ETCHING; HEATING FURNACES; INDUCTIVELY COUPLED PLASMA; OXYGEN; PLASMA ETCHING; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SPUTTERING; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC LAYERS; MIXED GASES; PLASMA DENSITIES; TURBOMOLECULAR PUMPS;

PLATINUM;

EID: 4944231002     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1761310     Document Type: Article

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