Structural and electrical characterization of ultrathin Er 2O3 films grown on Si(001) by reactive evaporation

Nanotechnology

Volumn 18, Issue 15, 2007, Pages

  Fang, Z B ^a,b   Chen, S ^a   Zhu, Y Y ^a   Wu, Y Q ^a   Fan, Y L ^a   Wang, Y Y ^a   Jiang, Z M ^a  

^a FUDAN UNIVERSITY   (China)

^b SHAOXING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; ERBIUM; FILM GROWTH; LEAKAGE CURRENTS; PERMITTIVITY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

AMBIENT PRESSURE; EFFECTIVE OXIDE THICKNESS (EOT); REACTIVE EVAPORATION;

ULTRATHIN FILMS;

ERBIUM; OXYGEN; SILICON DERIVATIVE;

AMBIENT AIR; ARTICLE; DIELECTRIC CONSTANT; ELECTRIC FIELD; EVAPORATION; PRIORITY JOURNAL; ROOM TEMPERATURE; STOICHIOMETRY; STRUCTURE ANALYSIS; THERMAL ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; VACUUM;

EID: 33947429688     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/15/155205     Document Type: Article

References (23)

1. Lu J, Aarik J, Sundqvist J, Kukli K, Harsta A and Carlesson J O 2005 J. Cryst. Growth 273 510
2. Yan Z J, Xu R, Wang Y Y, Chen S, Fan Y L and Jiang Z M 2004 Appl. Phys. Lett. 85 85
3. Copel M, Gribelyuk M A and Gusev E 2000 Appl. Phys. Lett. 76 436
4. Zhu L Q, Fang Q, He G, Liu M and Zhang L D 2005 Nanotechnology 16 2865
5. Alers G B, Fleming R M, Wong Y H, Dennis B, Pinczuk A, Redinho G, Urdahl R, Ong E and Hasan S 1998 Appl. Phys. Lett. 72 1308
6. Klein T M, Niu D, Epling W S, Li W, Maher D M, Hobbs C C, Hedge R I, Baumvol I J R and Parsons G N 1999 Appl. Phys. Lett. 75 4001
7. Yuan C L, Darmawan P, Setiawan Y and Lee P S 2006 Nanotechnology 17 3175
8. Dimoulas A, Vellianitis G, Travlos A, Ioannou-Sougleridis V and Nassiopoulou A G 2002 J. Appl. Phys. 92 426
9. Ioannou-Sougleridis V, Vellianitis G and Dimoulas A 2003 J. Appl. Phys. 93 3982
10. Hunter M E, Reed M J, El-masry N A, Roberts J C and Bedair S M 2000 Appl. Phys. Lett. 76 1935
11. Lippert G, Dabrowski J, Melnik V, Sorge R, Wenger Ch, Zaumseil P and Müssig H-J 2005 Appl. Phys. Lett. 86 042902
12. Nigro R Lo, Toro R G, Malandrino G, Raineri V and Fragalà I L 2003 Adv. Mater. 15 1071
13. Zhu Y Y, Chen S, Xu R, Fang Z B, Zhao J F, Fan Y L, Yang X J and Jiang Z M 2006 Appl. Phys. Lett. 88 162909
14. Ono H and Katsumata T 2001 Appl. Phys. Lett. 78 1832
15. Mikhelashvili V, Eisenstein G and Edelmann F 2002 Appl. Phys. Lett. 80 2156
16. Mikhelashvili V, Eisenstein G and Edelmann F 2001 J. Appl. Phys. 90 5447
17. Singh M P, Thakur C S, Shalini K, Bhat N and Shivashankar S A 2003 Appl. Phys. Lett. 83 2889
18. Xu R, Zhu Y Y, Chen S, Xue F, Fan Y L, Yang X J and Jiang Z M 2005 J. Cryst. Growth 277 496
19. Ishizaka A and Shiraki Y 1986 J. Electrochem. Soc. 133 666
20. He G, Liu M, Zhu L Q, Chang M, Fang Q and Zhang L D 2005 Surf. Sci. 576 67
21. Dimoulas A, Travlos A, Vellianitis G, Boukos N and Argyropoulos K 2001 J. Appl. Phys. 90 4224
22. Kwo J, Hong M, Kortan A R, Queeney K T, Chabal Y J, Mannaerts J P, Boone T, Krajewski J J, Sergent A M and Rosamilia J M 2000 Appl. Phys. Lett. 77 130
23. Hong J H, Moon T H and Myoung J M 2004 Microelectron. Eng. 75 263