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Journal of Crystal Growth

Volumn 277, Issue 1-4, 2005, Pages 496-501

Epitaxial growth of Er2O3 films on Si(0 0 1)

(7) Xu, R a Zhu, Y Y a Chen, S a Xue, F a Fan, Y L a Yang, X J a Jiang, Z M a

a FUDAN UNIVERSITY (China)

Author keywords

A3. Molecular beam epitaxy; B1. Oxides; B2. Dielectric materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; DIELECTRIC MATERIALS; ERBIUM COMPOUNDS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; OXIDES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS;

GROWTH TEMPERATURE; HETEROEPITAXIAL GROWTH; INTERFACIAL REACTIONS; SUBSTRATE TEMPERATURE;

EPITAXIAL GROWTH;

EID: 15844396811 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.02.015 Document Type: Article

Times cited : (46)

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