Formation of SiO2 nanocrystals in Lu2O3 high-k dielectric by pulsed laser ablation and application in memory device

Nanotechnology

Volumn 17, Issue 13, 2006, Pages 3175-3177

  Yuan, C L ^a   Darmawan, P ^a   Setiawan, Y ^a   Lee, P S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DATA STORAGE EQUIPMENT; LASER ABLATION; LUTETIUM; SEMICONDUCTOR DEVICES; SILICON;

AERIAL DENSITY; METAL-OXIDE-SEMICONDUCTOR; PULSED LASER DEPOSITION (PLD); RETENTION TIME;

NANOSTRUCTURED MATERIALS;

EID: 33746613337     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/13/016     Document Type: Article

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