Monolayer-level controlled incorporation of nitrogen at Si-SiO2 interfaces using remote plasma processing

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 6, 1999, Pages 3185-3196

  Niimi, H ^a   Lucovsky, G ^b  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033468406     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582041     Document Type: Article

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