Bond strain and defects at Si-SiO2 and internal dielectric interfaces in high-k gate stacks

Journal of Physics Condensed Matter

Volumn 16, Issue 44, 2004, Pages

  Lucovsky, G ^a   Phillips, J C ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPRESSIVE STRESS; CRYSTALLINE MATERIALS; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); SILICA;

BOND CONSTRAINT THEORY (BCT); SINGLE WAVELENGTH ELLIPSOMETRY (SWE); THERMAL EXPANSION COEFFICIENTS;

FIELD EFFECT TRANSISTORS;

EID: 9144240006     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/44/011     Document Type: Conference Paper

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