Process and characteristics of fully silicided source/drain (FSD) thin-film transistors

IEEE Transactions on Electron Devices

Volumn 53, Issue 12, 2006, Pages 3086-3094

  Lin, Chia Pin ^b   Hsiao, Yi Hsuan ^c   Tsui, Bing Yue ^a,d  

^a IEEE   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c MACRONIX INTERNATIONAL CO LTD   (Taiwan)

^d NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Implant to silicide (ITS); Silicide; Thin film transistor (TFT)

Indexed keywords

FULLY SILICIDED SOURCE/DRAIN (FSD); IMPLANT TO SILICIDE (ITS); IMPLANTTO SILICIDE (ITS); THERMAL BUDGET;

ANNEALING; BUDGET CONTROL; DRAIN CURRENT; ELECTRIC RESISTANCE; SILICIDES; THERMOANALYSIS;

THIN FILM TRANSISTORS;

EID: 33947231206     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.885651     Document Type: Article

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