Effects of Longitudinal Grain Boundaries on the Performance of MILC-TFT's

IEEE Electron Device Letters

Volumn 20, Issue 2, 1999, Pages 97-99

  Bhat, Gururaj A ^a   Jin, Zhonghe ^a   Kwok, Hoi S ^a   Wong, Man ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Lateral crystallization; MMGB; Nickel; Thin film transistors

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CRYSTALLIZATION; GRAIN BOUNDARIES; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE;

METAL INDUCED LATERALLY CRYSTALLIZED THIN FILM TRANSISTORS; SHORT CHANNEL EFFECTS (SCE); SOLID PHASE CRYSTALLIZED THIN FILM TRANSISTORS (SPC-TFT);

THIN FILM TRANSISTORS;

EID: 0033080261     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.740664     Document Type: Article

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