Polycrystalline silicon thin-film transistor with self-aligned SiGe raised source/drain

Applied Physics Letters

Volumn 81, Issue 25, 2003, Pages 4763-4765

  Peng, Du Zen ^a   Chang, Ting Chang ^b   Shih, Po Sheng ^a   Zan, Hsiao Wen ^a   Huang, Tiao Yuan ^a   Chang, Chun Yen ^a   Liu, Po Tsun ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS; ULTRAHIGH VACUUM;

GAS FLOW RATES;

POLYSILICON;

EID: 0037449318     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1528727     Document Type: Article

References (11)

1. H. Oshima and S. Morozumi, IEDM Tech. Dig. 89, 157 (1989).
2. S. D. Brotherton, Semicond. Sci. Technol. 10, 721 (1995).
3. T. Naguchi, H. Hayashi, and T. Oshima, Jpn. J. Appl. Phys., Part 2 25, L121 (1986).
4. M. Miyasaka, T. Komatsu, W. Itoh, A. Yamaguchi, and H. Ohashima, Ext. Abstr. SSDM 95, 647 (1995).
5. M. Yoshimi, M. Takahashi, T. Wada, K. Kato, S. Kambayashi, M. Kemmochi, and K. Natori, IEEE Trans. Electron Devices 37, 2015 (1990).
6. A. Kumar, J. K. O. Sin, C. T. Nguyen, and P. K. Ko, IEEE Trans. Electron Devices 45, 2514 (1998).
7. S. Zhang, C. Zhu, J. K. O. Sin, and P. K. T. Mok, IEEE Electron Device Lett. 20, 569 (1999).
8. H. C. Lin, H. Y. Lin, C. Y. Chang, T. F. Lei, P. J. Wang, R. C. Deng, J. Lin, and C. Y. Chao, J. Appl. Phys. 74, 5395 (1993).
9. H. C. Lin, C. Y. Chang, W. H. Chen, W. C. Tsai, T. C. Chang, and H. Y. Lin, J. Electrochem. Soc. 141, 2560 (1994).
10. H. C. Lin, T. G. Jung, H. Y. Lin, C. Y. Chang, and L. P. Chen, Appl. Phys. Lett. 65, 1700 (1994).
11. M. Racanelli and D. W. Greve, Appl. Phys. Lett. 58, 2096 (1991).