Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts

IEEE Electron Device Letters

Volumn 20, Issue 7, 1999, Pages 332-334

  Sarcona, Greg T ^a   Stewart, M ^b   Hatalis, M K ^b  

^a Aspect Technology   (United States)

^b Lehigh University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

COBALT SILICIDE; DRIVER CIRCUIT DESIGN; NICKEL SILICIDE; POLYSILICON THIN FILM TRANSISTORS; SELF ALIGNED CONTACTS; SOURCE DRAIN SERIES RESISTANCE;

THIN FILM TRANSISTORS;

EID: 0033165392     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.772367     Document Type: Article

References (6)

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