Short-channel metal-gate TFTs with modified Schottky-barrier source/drain

IEEE Electron Device Letters

Volumn 27, Issue 1, 2006, Pages 43-45

  Huang, Chih Feng ^a   Tsui, Bing Yue ^a,b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Schottky barrier (SB); Silicide; Thin film transistor (TFT)

Indexed keywords

GATES (TRANSISTOR); PERMITTIVITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILM CIRCUITS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

METAL-GATE; SHORT-CHANNEL; SILICIDED SOURCE/DRAIN;

THIN FILM TRANSISTORS;

EID: 33645474373     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.860378     Document Type: Article

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