Formation of Cobalt Silicided Shallow Junction Using Implant Into/Through Suicide Technology and Low Temperature Furnace Annealing

IEEE Transactions on Electron Devices

Volumn 43, Issue 2, 1996, Pages 258-266

  Chen, Bin Shing ^a   Chen, Mao Chieh ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ARSENIC; BORON COMPOUNDS; COBALT; CURRENT DENSITY; FLUORINE; ION IMPLANTATION; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; THIN FILMS;

BORON FLUORIDE; COBALT SILICIDED SHALLOW JUNCTION; FLUORINE IMPLANTATION; LEAKAGE CURRENT DENSITY; LOW TEMPERATURE FURNACE ANNEALING; SILICON INTERFACE MORPHOLOGY; THIN SILICIDE FILM;

SEMICONDUCTOR JUNCTIONS;

EID: 0030080749     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.481726     Document Type: Article

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