Thermal stability of CoSi2 film for CMOS salicide

IEEE Transactions on Electron Devices

Volumn 47, Issue 11, 2000, Pages 2208-2213

  Ohguro, Tatsuya ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; GATES (TRANSISTOR); ION IMPLANTATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SPUTTERING; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

COBALT SILICIDE; NARROW LINE EFFECT; SALICIDE PROCESSES; SHEET RESISTANCE DEGRADATION;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0034317023     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.877185     Document Type: Article

References (20)

1. T. Shibata et al., "An optimally designed process for submicron MOSFET's," in IEDM Tech. Dig., 1981, pp. 647-650.
2. C. K. Lau et al., "Titanium di-silicide self-aligned source/drain + gate technology," in IEDM Tech. Dig., 1982, pp. 714-717.
3. M. E. Alperin etal., "Development of the self-aligned titanum suicide process for VLSI applications," IEEE Trans. Electron. Devices, vol. ED-32, pp. 141-149, Feb. 1985.
4. T. Yamazaki et al., "21 psc switching 0.1 //m-CMOS at room temperature using high performance Co salicide process," in IEDM Tech. Dig., 1993, pp. 906-907.
5. T. Yoshitomi et al., "High performance 0.15 /j,m single gate Co salicide CMOS," in Symp. VLSI Tech. Dig., 1996, pp. 34-35.
6. T. Ohguro et al, "Ultra-shallow junction and salicide techniques for advanced CMOS devices," Proc. Electrochem. Soc., vol. 97-3, pp. 275-295, 1997.
7. T. Ohguro, E. Morifuji, Msaito, M. Ono, T. Yoshitomi, H. S. Momose, N. Ito, and H. Iwai, "0.2 /j,m analog CMOS with very low noise figure at 2 GHz operation," in Symp. VLSI Tech. Dig., 1997, pp. 132-133.
8. T. C. Holloway et ai, "0.18 //m CMOS technology for high-performance, low-power, and RF applications," in Symp. VLSI Tech. Dig., 1997, pp. 13-14.
9. A. Chatterjee et ai, "Sub-lOOnm gate length metal gate NMOS transistors fabricated by a replacement gate process," in IEDM Tech. Dig., 1997, pp. 821-824.
10. M. Tsukamoto, H. Kuroda, and Y Okamoto, "0.25 ftm W-polycide dual gate and buried metal on diffusion layer (BMD) technology for DRAMEmbedded logic devices," in Symp. VLSI Tech. Dig., 1997, pp. 23-24.
11. H. Ishiuchi et al., "Embedded DRAM technologies," in IEDM Tech. Dig., 1997, pp. 33-36.
12. J. R. Pfiester et al., "The effects of boron penetration on P+ polysilicon gated PMOS devices," IEEE Trans. Electron. Devices, vol. 37, pp. 1842-1851, Aug. 1990.
13. S. Shishiguchi, A. Mineji, T. Hayashi, and S. Saito, "Boron implanted shallow junction formation by high-temperature/short-time/highram (400C/sec) RTA," in Symp. VLSI Tech. Dig., 1997, pp. 89-90.
14. J. B. Lasky, J. S. Nakos, O. J. Cain, and P. J. Geiss, "Comparison of transformation to low-resistivity phase and agglomeration of TiSi2 and CoSi2," IEEE Trans. Electron. Devices, vol. 38, pp. 262-269, Feb. 1991.
15. H. Minakata, K. Goto, and T. Sugii, "Effect of cap-metal on Co salicide process," in Ext. Abst. Int. Conf. Solid State Devices and Materials, Yokohama, 1996, pp. 395-397.
16. H. Kotaki et al, "Novel oxygen free titanum silicidation (OFS) processing for low resistance and thermal stable salicide in deep submicron dual gate CMOS," in Ext. Abst. Int. Conf. Solid State Devices and Materials, Yokohama, 1994, pp. 628-630.
17. J. S. Byun, C. R. Kirn, K. G. Rha, J. J. Kirn, and W. S. Kirn, "TiN/TiSi2 formation using TiNx layer and its feasibilities in ULSI," in Ext. Abst. Int. Conf. Solid State Devices and Materials, Yokohama, 1994, pp. 640-642.
18. K. Fujii et al., "A thermally stable Ti-W salicide for deep-submicron logic with embedded DRAM," in IEDM Tech. Dig., 1996, pp. 451-454.
19. T. Ohguro et al., "Analysis of resistance behavior in Ti- and Ni-Saliicded polysilicon films," IEEE Trans. Electron. Devices, vol. 32, pp. 2305-2317, Dec. 1994.
20. T. Ohguro et al, "Nitrogen-doped nickel monosilicide technique for deep submicron CMOS salicide," in IEDM Tech. Dig., 1995, pp. 453-456.