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Materials Science and Engineering R: Reports

Volumn 16, Issue 2, 1996, Pages 43-96

Formation and stability of silicides on polycrystalline silicon

(3) Colgan, E G a Gambino, J P a Hong, Q Z b

a IBM MICROELECTRONICS (United States)

b TEXAS INSTRUMENTS (United States)

Author keywords

Polysilicon; Silicides

Indexed keywords

AGGLOMERATION; AMORPHOUS SILICON; CRYSTAL GROWTH; DEFORMATION; DEGRADATION; GRAIN BOUNDARIES; INTERFACES (MATERIALS); MORPHOLOGY; OXIDATION; THERMODYNAMIC STABILITY; THIN FILMS;

BLANKET FILMS; DEVICE DEGRADATION; INTERFACE ROUGHENING; MORPHOLOGICAL STABILITY; POLYCRYSTALLINE SILICON; SILICIDE FORMATION; SILICIDES;

SEMICONDUCTING SILICON;

EID: 0030086048 PISSN: 0927796X EISSN: None Source Type: Journal
DOI: 10.1016/0927-796X(95)00186-7 Document Type: Review

Times cited : (208)

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