Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layers

Journal of the Electrochemical Society

Volumn 154, Issue 4, 2007, Pages

  Lim, Andy Eu Jin ^a   Hwang, Wan Sik ^a   Wang, Xin Peng ^a   Lai, Doreen Mei Ying ^b   Samudra, Ganesh S ^a   Kwong, Dim Lee ^c   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; HAFNIUM ALLOYS; INTERDIFFUSION (SOLIDS); METALLIC FILMS; WORK FUNCTION;

METAL GATE WORK FUNCTION; METAL INTERDIFFUSION; METAL THICKNESS RATIO; THIN METALLIC LAYERS;

GATES (TRANSISTOR);

EID: 33947154414     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2437070     Document Type: Article

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