Effects of high-κ dielectrics on the workfunctions of metal and silicon gates

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue TECHNOLOGY SYMP., 2001, Pages 49-50

  Yeo, Y C ^a   Ranade, P ^a   Lu, Q ^a   Lin, R ^a   King, T J ^a   Hu, C ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; INTERFACES (MATERIALS); MOS DEVICES; POLYSILICON; SILICA;

WORKFUNCTIONS;

GATES (TRANSISTOR);

EID: 0034798978     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Dual-metal gate technology for deep-submicron CMOS transistors
2. 2 gate dielectrics
3. Theory of semiconductor heterojunctions: The role of quantum dipoles
4. Electronic structure of a metal-semiconductor interface
5. Electronic properties of ideal and interface-modified metal-semiconductor interfaces
6. Band offsets of wide-band-gap oxides and implications for future electronic devices
7. Electronic structure and optical properties of α and β phases of silicon nitride, silicon oxynitride, and with comparison to silicon dioxide
8. 2 gate stack with poly-Si gate electrode