Work function controllability of metal gates made by interdiffusing metal stacks with low and high work functions

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 284-287

  Matsukawa, T ^a   Liu, Y X ^a   Masahara, M ^a   Ishii, K ^a   Endo, K ^a   Yamauchi, H ^a   Sugimata, E ^a   Takashima, H ^a   Higashino, T ^a   Suzuki, E ^a   Kanemaru, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Al; Alloy; Interdiffusion; Metal gate; Ni; Ta; Work function

Indexed keywords

ALLOYING; ALUMINUM; CAPACITANCE; DIFFUSION IN SOLIDS; NICKEL; SILICON WAFERS; TANTALUM; TRANSISTORS;

DOUBLE-GATE TRANSISTORS; INTERDIFFUSION; METAL GATE; WORK FUNCTION;

GATES (TRANSISTOR);

EID: 19944418274     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.034     Document Type: Conference Paper

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