메뉴 건너뛰기




Volumn 6, Issue 3, 2006, Pages 686-690

Nanofabrication based on MEMS technology

Author keywords

Microelectromechanical system (MEMS); Nanoelectromechanical system (NEMS); Nanofabrication

Indexed keywords

NANO BEAMS;

EID: 33947120658     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2006.874034     Document Type: Article
Times cited : (16)

References (25)
  • 1
    • 0001287420 scopus 로고    scopus 로고
    • Fabrication of high-frequency nanometer-scale mechanical resonators from bulk Si crystals
    • A. N. Cleland and M. L. Roukes, "Fabrication of high-frequency nanometer-scale mechanical resonators from bulk Si crystals," Appl. Phys. Lett., vol. 69, pp. 2653-2655, 1996.
    • (1996) Appl. Phys. Lett , vol.69 , pp. 2653-2655
    • Cleland, A.N.1    Roukes, M.L.2
  • 2
    • 0000898232 scopus 로고    scopus 로고
    • Nanofabrication and electrostatic operation of single-crystal silicon paddle oscillators
    • S. Evoy, D. W. Carr, L. Sekaric, A. Olkhovets, J. M. Parpia, and H. G. Craighead, "Nanofabrication and electrostatic operation of single-crystal silicon paddle oscillators," J. Appl. Phys., vol. 86, pp. 6072-6077, 1999.
    • (1999) J. Appl. Phys , vol.86 , pp. 6072-6077
    • Evoy, S.1    Carr, D.W.2    Sekaric, L.3    Olkhovets, A.4    Parpia, J.M.5    Craighead, H.G.6
  • 4
    • 0001551483 scopus 로고    scopus 로고
    • Room-temperature operation of Si single-electron memory with self-aligned floating dot gate
    • A. Nakajima, T. Futatsugi, K. Kosemura, T. Fukano, and N. Yokoyama, "Room-temperature operation of Si single-electron memory with self-aligned floating dot gate," Appl. Phys. Lett., vol. 70, pp. 1742-1744, 1997.
    • (1997) Appl. Phys. Lett , vol.70 , pp. 1742-1744
    • Nakajima, A.1    Futatsugi, T.2    Kosemura, K.3    Fukano, T.4    Yokoyama, N.5
  • 6
    • 36449003054 scopus 로고
    • Nanometer-scale field-induced oxidation of Si(111):H by a conducting-probe scanning force microscope: Doping dependence and kinetics
    • S. Y. Chou, P. R. Krauss, and P. J. Renstrom, "Nanometer-scale field-induced oxidation of Si(111):H by a conducting-probe scanning force microscope: Doping dependence and kinetics," Appl. Phys. Lett., vol. 67, pp. 3144-3166, 1995.
    • (1995) Appl. Phys. Lett , vol.67 , pp. 3144-3166
    • Chou, S.Y.1    Krauss, P.R.2    Renstrom, P.J.3
  • 7
    • 0030570065 scopus 로고    scopus 로고
    • Imprint lithography with 25-nanometer resolution
    • _, "Imprint lithography with 25-nanometer resolution," Science, vol. 272, pp. 85-87, 1996.
    • (1996) Science , vol.272 , pp. 85-87
    • Chou, S.Y.1    Krauss, P.R.2    Renstrom, P.J.3
  • 9
    • 36448999735 scopus 로고
    • High-resolution focused ion beams
    • J. Orloff, "High-resolution focused ion beams," Rev. Scie. Instrum., vol. 64, pp. 1105-1130, 1993.
    • (1993) Rev. Scie. Instrum , vol.64 , pp. 1105-1130
    • Orloff, J.1
  • 10
    • 0035396298 scopus 로고    scopus 로고
    • A review of focused ion beam applicationsin microsystem technology
    • S. Reyntjens and R. Puers, "A review of focused ion beam applicationsin microsystem technology," J. Micromech. Microeng., vol. 11, pp. 287-300, 2001.
    • (2001) J. Micromech. Microeng , vol.11 , pp. 287-300
    • Reyntjens, S.1    Puers, R.2
  • 11
    • 1442295401 scopus 로고    scopus 로고
    • Mechanical vertical manipulation of selected single atoms by soft nanoindentation using near contact atomic force microscopy
    • 1-4
    • N. Oyabu, O. Custance, I. Yi, Y. Sugawara, and S. Morita, "Mechanical vertical manipulation of selected single atoms by soft nanoindentation using near contact atomic force microscopy," Phys. Rev. Lett., vol. 90, p. 176 102, 2003, (1-4).
    • (2003) Phys. Rev. Lett , vol.90 , pp. 176-102
    • Oyabu, N.1    Custance, O.2    Yi, I.3    Sugawara, Y.4    Morita, S.5
  • 12
    • 0031249362 scopus 로고    scopus 로고
    • Self-organized nanoscale structures in Si/Ge films
    • F. Liu and M. G. Lagally, "Self-organized nanoscale structures in Si/Ge films," Surf. Sci., vol. 386, pp. 169-181, 1997.
    • (1997) Surf. Sci , vol.386 , pp. 169-181
    • Liu, F.1    Lagally, M.G.2
  • 13
    • 0036840778 scopus 로고    scopus 로고
    • Strain engineering, self-assembly, and nanoarchitectures in thin SiGe films on Si
    • A. W. Woll, P. Rugheimer, and M. G. Lagally, "Strain engineering, self-assembly, and nanoarchitectures in thin SiGe films on Si," Mater. Sci. Eng. B, vol. 96, pp. 94-101, 2002.
    • (2002) Mater. Sci. Eng. B , vol.96 , pp. 94-101
    • Woll, A.W.1    Rugheimer, P.2    Lagally, M.G.3
  • 14
    • 0036685660 scopus 로고    scopus 로고
    • Self-assembling Ge(Si)/Si(100) quantum dots
    • Aug
    • J. Drucker, "Self-assembling Ge(Si)/Si(100) quantum dots," IEEE J. Quantum Electron., vol. 38, no. 8, pp. 975-987, Aug. 2002.
    • (2002) IEEE J. Quantum Electron , vol.38 , Issue.8 , pp. 975-987
    • Drucker, J.1
  • 15
    • 1642601999 scopus 로고    scopus 로고
    • Microcantilever probe array integrated with piezoresistive sensor
    • Z. X. Yang, X. X. Li, Y. L. Wang, H. F. Bao, and M. Liu, "Microcantilever probe array integrated with piezoresistive sensor," Microelectron. J., vol. 35, pp. 479-483, 2004.
    • (2004) Microelectron. J , vol.35 , pp. 479-483
    • Yang, Z.X.1    Li, X.X.2    Wang, Y.L.3    Bao, H.F.4    Liu, M.5
  • 16
    • 0242317277 scopus 로고    scopus 로고
    • Ultrathin single-crystalline-silicon cantilever resonators: Fabrication technology and significant specimen size effect on Young's modulus
    • X. X. Li, T. Ono, Y. L. Wang, and M. Esashi, "Ultrathin single-crystalline-silicon cantilever resonators: Fabrication technology and significant specimen size effect on Young's modulus," Appl. Phys. Lett., vol. 83, pp. 3081-3083, 2003.
    • (2003) Appl. Phys. Lett , vol.83 , pp. 3081-3083
    • Li, X.X.1    Ono, T.2    Wang, Y.L.3    Esashi, M.4
  • 17
    • 0032607226 scopus 로고    scopus 로고
    • Fabrication of nanoscale point contact metal-oxide-semiconductor field-effect-transistors using micrometerscale design rule
    • H. Ishikuro and T. Hiramoto, "Fabrication of nanoscale point contact metal-oxide-semiconductor field-effect-transistors using micrometerscale design rule," Jpn. J. Appl. Phys, vol. 38, pp. 396-398, 1999.
    • (1999) Jpn. J. Appl. Phys , vol.38 , pp. 396-398
    • Ishikuro, H.1    Hiramoto, T.2
  • 18
    • 0000382265 scopus 로고    scopus 로고
    • Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate
    • H. Ishikuro, T. Fujii, T. Saraya, G. Hashiguchi, T. Hiramoto, and T. Ikoma, "Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate," Appl. Phys. Lett., vol. 68, pp. 3585-3587, 1996.
    • (1996) Appl. Phys. Lett , vol.68 , pp. 3585-3587
    • Ishikuro, H.1    Fujii, T.2    Saraya, T.3    Hashiguchi, G.4    Hiramoto, T.5    Ikoma, T.6
  • 20
    • 33947163188 scopus 로고
    • Charge multiplication in GaP p-n junctions
    • Jpn
    • G. Hashiguchi and H. Mimura, "Charge multiplication in GaP p-n junctions," J. Appl. Phys., vol. 33, pp. 16491-654, 1994, Jpn..
    • (1994) J. Appl. Phys , vol.33 , pp. 16491-16654
    • Hashiguchi, G.1    Mimura, H.2
  • 21
    • 0031221439 scopus 로고    scopus 로고
    • Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics
    • H. Namatsu, S. Horiguchi, M. Nagase, and K. Kurihara, "Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics," J. Vac. Sci. Technol. B, vol. 15, pp. 1688-1696, 1997.
    • (1997) J. Vac. Sci. Technol. B , vol.15 , pp. 1688-1696
    • Namatsu, H.1    Horiguchi, S.2    Nagase, M.3    Kurihara, K.4
  • 22
    • 0010157479 scopus 로고    scopus 로고
    • Fabrication of nanometer-size Si wires using a bevel SiO2 wall as an electron cyclotron resonance plasma etching mask
    • K. Ishii, E. Suzuki, and T. Sekigawa, "Fabrication of nanometer-size Si wires using a bevel SiO2 wall as an electron cyclotron resonance plasma etching mask," J. Vac. Sci. Technol. B, vol. 15, pp. 543-547, 1997.
    • (1997) J. Vac. Sci. Technol. B , vol.15 , pp. 543-547
    • Ishii, K.1    Suzuki, E.2    Sekigawa, T.3
  • 23
    • 0033328014 scopus 로고    scopus 로고
    • Jpn. electrical characteristics of air-bridge-structured silicon nanowire fabricated by micromachining a silicon-on-insulator substrate
    • H. Fujii, S. Kanemaru, T. Matsukawa, and J. Itoh, "Jpn. electrical characteristics of air-bridge-structured silicon nanowire fabricated by micromachining a silicon-on-insulator substrate," J. Appl. Phys., vol. 38, pp. 7237-7240, 1999.
    • (1999) J. Appl. Phys , vol.38 , pp. 7237-7240
    • Fujii, H.1    Kanemaru, S.2    Matsukawa, T.3    Itoh, J.4
  • 24
    • 33947172317 scopus 로고    scopus 로고
    • A simple process for lateral single crystal silicon nanowires
    • V. Milanovic and L. Doherty, "A simple process for lateral single crystal silicon nanowires," Proc. IMECE, p. 33 392, (1-7).
    • Proc. IMECE , vol.392 , Issue.1-7 , pp. 33
    • Milanovic, V.1    Doherty, L.2
  • 25
    • 0037348256 scopus 로고    scopus 로고
    • Mass sensing of adsorbed molecules in sub-picogram sample with ultrathin silicon resonator
    • T. Ono, X. Li, H. Miyashita, and M. Esashi, "Mass sensing of adsorbed molecules in sub-picogram sample with ultrathin silicon resonator," Rev. Sci. Instrum., vol. 74, pp. 1240-1243, 2003.
    • (2003) Rev. Sci. Instrum , vol.74 , pp. 1240-1243
    • Ono, T.1    Li, X.2    Miyashita, H.3    Esashi, M.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.