Electrical characteristics of air-bridge-structured silicon nanowire fabricated by micromachining a silicon-on-insulator substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 12 B, 1999, Pages 7237-7240

  Fujii, Hideo ^a,b   Kanemaru, Seigo ^a   Matsukawa, Takashi ^a   Itoh, Junji ^a,c  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Hysteresis; Micromachining; Negative resistance; Silicon nanowire; Silicon on insulator substrate; Surface states

Indexed keywords

HYSTERESIS; MICROMACHINING; NEGATIVE RESISTANCE; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY;

AIR-BRIDGE-STRUCTURED SILICON NANOWIRES;

SEMICONDUCTOR DEVICES;

EID: 0033328014     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.7237     Document Type: Article

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