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Volumn 38, Issue 1 B, 1999, Pages 396-398
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Fabrication of Nano-Scale Point Contact Metal-Oxide-Semiconductor Field-Effect-Transistors Using Micrometer-Scale Design Rule
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Author keywords
Anisotropic etching; Coulomb blockade; Silicon on insulator substrate; Single electron transistor; SiO2 Si3N4 double layer mask
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Indexed keywords
ELECTROSTATICS;
ETCHING;
MASKS;
NANOTECHNOLOGY;
POINT CONTACTS;
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICA;
SILICON NITRIDE;
SILICON ON INSULATOR TECHNOLOGY;
SILICON WAFERS;
COULOMB BLOCKADE;
SINGLE ELECTRON TRANSISTORS;
MOSFET DEVICES;
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EID: 0032607226
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/JJAP.38.396 Document Type: Article |
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Times cited : (10)
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References (8)
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