Coulomb blockade oscillations at room temperature in a Si quantum wire metal-oxide-semiconductor field-effect transistor fabricated by anisotropic etching on a silicon-on-insulator substrate

Applied Physics Letters

Volumn 68, Issue 25, 1996, Pages 3585-3587

  Ishikuro, H ^a   Fujii, T ^a   Saraya, T ^a   Hashiguchi, G ^a   Hiramoto, T ^a   Ikoma, T ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000382265     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116645     Document Type: Article

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