Ultrathin single-crystalline-silicon cantilever resonators: Fabrication technology and significant specimen size effect on Young's modulus

Applied Physics Letters

Volumn 83, Issue 15, 2003, Pages 3081-3083

  Li, Xinxin ^a,b   Ono, Takahito ^b   Wang, Yuelin ^a   Esashi, Masayoshi ^b  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CRYSTAL RESONATORS; ELASTIC MODULI; NATURAL FREQUENCIES; OXIDATION; SILICON;

CANTILEVER RESONATORS;

SINGLE CRYSTALS;

EID: 0242317277     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1618369     Document Type: Article

References (22)

1. M. Roukes, Technical Digest, Solid-State Sensor and Actuator Workshop, Hilton Head Island, SC, 2000, p. 367.
2. J. Fritz, M. K. Baller, H. P. Lang, H. Rothuizen, P. Vettiger, E. Meyer, H.-J. Guntherodt, C. Gerber, and J. K. Gimzewski, Science (Washington, DC, U.S.) 288, 316 (2000).
3. B. Ilic, D. Czaplewski, M. Zalalutdinov, H. G. Craighead, P. Neuzil, C. Campagnolo, and C. Batt, J. Vac. Sci. Technol. B 19, 2825 (2001).
4. M. B. Viani, T. E. Schaffer, A. Chand, M. Reif, H. E. Gaub, and P. K. Hansma, J. Appl. Phys. 86, 2258 (1999).
5. T. R. Albrech, P. Quitter, D. Horne, and D. Rugar, J. Appl. Phys. 69, 668 (1991).
6. B. Ilic, D. Czaplewski, H. G. Craighead, P. Neuzil, C. Campagnolo, and C. Batt, Appl. Phys. Lett. 77, 450 (2000).
7. T. D. Stowe, K. Yasumura, T. W. Kenny, D. Botkin, K. Wago, and D. Rugar, Appl. Phys. Lett. 71, 288 (1997).
8. K. E. Peterson, Proc. IEEE 70, 420 (1982).
9. J. Yang, T. Ono, and M. Esashi, Sens. Actuators A 82, 102 (2000).
10. M. Bao, in Micro Mechanical Transducers - Pressure Sensors, Accelerometers and Gyroscopes, edited by S. Middelhoek (ELSEVIER, New York, 2000), Chap. 2.
11. A. N. Cleland and M. L. Roukes, Appl. Phys. Lett. 69, 2653 (1996).
12. J. A. Harley and T. W. Kenny, Appl. Phys. Lett. 75, 289 (1999).
13. A. Gupta, J. P. Denton, H. McNally, and R. Bashir, J. Microelectromech. Syst. 12, 185 (2003).
14. T. Yi, L. Li, and C. J. Kim, Sens. Actuators A 83, 172 (2000).
15. R. E. Rudd and J. Q. Broughton, J. Modeling and Simulation of Micro-systems, 1, 29 (1999).
16. J. Q. Broughton, C. A. Meli, P. Vashishta, and K. Kalia, Phys. Rev. B 56, 611 (1997).
17. J. Q. Broughton, F. F. Abraham, N. Bernstein, and E. Kaxiras, Phys. Rev. B 60, 2391 (1999).
18. R. E. Rudd and J. Q. Broughton, Phys. Rev. B 58, 5893 (1998).
19. T. Namazu, Y. Isono, and T. Tanaka, J. Microelectromech. Syst. 9, 450 (2000).
20. P. Poncharal, Z. L. Wang, D. Ugarte, and W. A. de Heer, Science (Washington, DC, U.S.) 283, 1513 (1999).
21. D. Walsh and B. Culshaw, Sens. Actuators A 25-27, 711 (1991).
22. Properties of Silicon, EMIS Data-Reviews Series No. 4 (INSPEC, London, 1988).