Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 5, 1997, Pages 1688-1696

  Namatsu, Hideo ^a   Horiguchi, Seiji ^a   Nagase, Masao ^a   Kurihara, Kenji ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC RESISTANCE; ETCHING; NANOTECHNOLOGY; OXIDATION; SEMICONDUCTING SILICON;

CRYSTALLOGRAPHIC ORIENTATION; ONE DIMENSIONAL SILICON NANOWIRE;

NANOSTRUCTURED MATERIALS;

EID: 0031221439     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589356     Document Type: Article

References (10)

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