Fabrication of one-dimensional nanowire structures utilizing crystallographic orientation in silicon and their conductance characteristics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 5, 1997, Pages 1688-1696

  Namatsu, Hideo ^a   Horiguchi, Seiji ^a   Nagase, Masao ^a   Kurihara, Kenji ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC RESISTANCE; ETCHING; NANOTECHNOLOGY; OXIDATION; SEMICONDUCTING SILICON;

CRYSTALLOGRAPHIC ORIENTATION; ONE DIMENSIONAL SILICON NANOWIRE;

NANOSTRUCTURED MATERIALS;

EID: 0031221439     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589356     Document Type: Article

References (10)

1. K. Morimoto, Y. Hirai, K. Yuki, K. Inoue, M. Niwa, and J. Yaki, Extended Abstracts of the 24th Conference on Solid State Devices and Materials (The Japan Society of Applied Physics, Makuhari, 1993), p. 344.
2. Y. Nakajima, Y. Takahashi, S. Horiguchi, K. Iwadate, H. Namatsu, K. Kurihara, and M. Tabe, Appl. Phys. Lett. 65, 2833 (1994).
3. H. Namatsu, Y. Takahashi, M. Nagase, and K. Murase, J. Vac. Sci. Technol. B 13, 2166 (1995).
4. H. Namatsu, M. Nagase, K. Kurihara, K. Iwadate, T. Furuta, and K. Murase, J. Vac. Sci. Technol. B 13, 1473 (1995).
5. D. L. Kendall, J. Vac. Sci. Technol. A 8, 3598 (1990).
6. T. Hiramoto, K. Hirakawa, Y. Iye, and T. Ikoma, Appl. Phys. Lett. 54, 2103 (1989).
7. Y. Fukai, S. Yamada, and H. Nakano, Appl. Phys. Lett. 56, 2123 (1990).
8. Y. Fukai, H. Nakano, S. Nakata, S. Tarucha, and K. Arai, Solid State Commun. 94, 757 (1995).
9. M. Buttiker, Y. Imry, R. Landauer, and S. Pinhas, Phys. Rev. B 31, 6207 (1985).
10. S. Horiguchi, Y. Nakajima, Y. Takahashi, and M. Tabe, Jpn. J. Appl. Phys., Part 1 34, 5489 (1995).